Patent AT-E400897-T1: [Translated] SEMICONDUCTOR COMPONENT WITH SUPERPARAELECTRIC GATE INSULATOR

A semiconductor device includes a channel region 18 of semiconductor, a conductive gate electrode 12 adjacent to the channel region 18 and a gate dielectric 10 between the conductive gate electrode 12 and the channel region 18. The gate dielectric 10 is formed of a material that is a ferroelectric in bulk but in a superparaelectric state. The gate dielectric may be for instance of formula AXO3, where A is a group I or II element, and X is titanium, niobium, zirconium and/or hafnium. Such a gate dielectric 10 may be formed for example by low temperature deposition of the gate dielectric 10 or by using dopants of metal oxides to prevent domain growth, or both.

[
  "009:25"
]

[
  "009:066"
]

[
  "NIH"
]