Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz

Data published in paper "Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz"We investigated the effect of two uncertainty sources, probe placement error and capacitance per unit length variation, on transistor S-parameter measurements calibrated with two different mTRL calibration kits. We propagated these uncertainties onto common-emitter (CE) and common-base (CB) heterojunction-bipolar-transistor (HBT) measurements to show how the calibration kit selection affects the accuracy of the resulting S-parameter transistor measurements and calculated characterization metrics such as K factor and maximum available gain (MAG). The measured data are from Sparameters taken from a Vector Network Analyzer (VNA). We used WR3.4 extender heads connected to a VNA and measured S-parameters from 210 GHz to 325 GHz with a 500 MHz frequency step. The probes were landed manually for each of calibration standard measurements and transistor measurements with an approximate probe landing error of +/- 10 um. Each raw measurement was stored and corrected later in post-processing using the mTRL calibration algorithm in the Microwave Uncertainty Framework (MUF). In this dataset, we also included the capacitance per unit length from a commercial Electromagnetic (EM) solver of the two transmission line cross sections used in the calibration kits. We varied the geometric and material properties of the transmission lines to obtain the histograms.

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  "006:55"
]

[
  "en"
]

[
  "006:045"
]

[
  "Electronics:Semiconductors"
]