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Insulated-Gate Bipolar Transistor (IGBT) Accelerated Aging
Preliminary data from thermal overstress accelerated aging using the aging and characterization system. The data set contains aging data from 6 devices, one device aged with DC gate bias and the rest aged with a squared signal gate bias. Several variables are recorded and, in some cases, high-speed measurements of gate voltage, collector-emitter voltage, and collector current are available. The data set is provided by the NASA Prognostics Center of Excellence (PCoE).
Complete Metadata
| bureauCode |
[ "026:00" ] |
|---|---|
| identifier | https://data.nasa.gov/api/views/7wwx-fk77 |
| issued | 2022-11-22 |
| landingPage | https://data.nasa.gov/dataset/insulated-gate-bipolar-transistor-igbt-accelerated-aging |
| programCode |
[ "026:021" ] |
| theme |
[ "Raw Data" ] |
