Data for "Distributed contactless interconnects for millimeter-wave heterogeneous integration"

Included here are figures and other relevant data from the paper "Distributed contactless interconnects for millimeter-wave heterogeneous integration", submitted to TMTT Letters. Abstract: State-of-the-art integrated circuits leverage dissimilar materials to optimize system performance. Such heterogeneous integration often involves multiple chips electrically coupled to one another via bump bonds or wire-bond interconnects. While these interconnects are a mature technology for low-frequency operation (< 100 GHz), they have stringent fabrication requirements and are prone to failure during operation in the terahertz range (300 GHz to 10 THz). Next-generation integrated circuits require alternative interconnect topologies that are less sensitive to fabrication tolerances and conditions, are more robust, and have superior high-frequency performance. Here, we demonstrate distributed coupling to 325 GHz between broadside-coupled coplanar waveguides without bump bonds, wire bonds, or direct metal-to-metal bonding. The insertion loss of these contactless interconnects was approximately 1.4 dB at the maximum in the passbands at 63 GHz, 93 GHz, and 120 GHz. This interconnect topology enables robust integration of low-cost silicon with high-speed compound semiconductors for terahertz communications networks to improve reliability and increase yield.

[
  "006:55"
]

[
  "en"
]

[
  "006:045"
]

[
  "Electronics:Electromagnetics",
  "Metrology:Electrical/electromagnetic metrology"
]