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Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method
- Organization: National Institute of Standards and Technology
- Updated: 2018-04-20 | Harvested: June 27, 2025 at 07:09 PM
An in-house developed finite-difference time-domain (FDTD) code has been used to simulate certain patterned defects as found in the semiconductor industry. Intrinsic to FDTD is the establishment...
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